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| SSM9563 Elektronische Bauelemente -6A, -40V,RDS(ON) 40m[ P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SSM9563 provide the designer with best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SSM9563 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. SOT-223 Features * Simple Drive Requirement * Fast Switching Characteristic * Lower On-Resistance D REF. A C D E I H Date Code 9563 G G D S Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0 10 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 S Millimeter Min. Max. 13TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1,2 3 3 Symbol VDS VGS ID@TA=25 oC ID@TA=70 C IDM PD@TA=25 C o o Ratings -40 25 -6 ..0 -4 ..8 -30 2.7 0.02 Unit V V A A A W W / oC o Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max. Rthj-a Ratings 50 Unit o C/W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 SSM9563 Elektronische Bauelemente -6A, -40V,RDS(ON) 40m[ P-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C ) Drain-Source Leakage Current(Tj= 70 C ) Static Drain-Source On-Resistance 2 o o o Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min. - 40 _ Typ. _ - 0.03 _ _ _ _ _ _ Max. _ Unit V V/ C V nA uA uA o Test Condition VGS=0V, ID=-250uA Reference to 25 C, ID=-1mA VDS=VGS, ID=-250uA VGS=25V VDS=-40V,VGS=0 VDS=-32 ,VGS=0 VGS=-10V, ID=- 6A VGS=-4.5V, ID=-4 A o _ -1.0 _ _ _ _ -3.0 100 -1 -25 40 60 30 _ _ RDS(ON) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs _ _ _ _ _ _ _ _ _ _ _ m [ Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance 19 5 8 12 7 68 38 1600 240 190 10 nC ID=-6A VDS=-32V VGS=-4.5V _ _ _ _ VDD=-20V ID=-1A nS VGS=-10 V RG=3.3[ RD=20 [ 2560 _ _ pF VGS=0V VDS=-25V f=1.0MHz _ _ S VDS=-10V, ID=-6 A Source-Drain Diode Parameter Forward On Voltage 2 Reverse Recovery Time 2 Symbol VSD Trr Min. _ _ Typ. _ Max. -1.2 _ _ Unit V nS nC Test Condition IS=-2A, VGS=0V. IS=-6A, VGS=0V. dl/dt=100A/us 37 54 Reverse Recovery Change Qrr _ Notes: 1.Pulse width limited by Max. junction temperature. 300us, dutycycleO2%. 2.Pulse widthO 2 o 3.Surface mounted on 1 in copper pad of FR4 board;120 C/W when mounted on min. copper pad. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 SSM9563 Elektronische Bauelemente -6A, -40V,RDS(ON) 40m[ P-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature http://www.SeCoSGmbH.com/ Fig 5. Forward Characteristics of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 4 SSM9563 Elektronische Bauelemente -6A, -40V,RDS(ON) 40m[ P-Channel Enhancement Mode Power Mos.FET Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 12 /W 120 : /W Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4 |
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